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US 2014/0349475 A1Published application
Moisture barrier for a wire bond
AssigneeLSI Corporation
InventorsJohn M. DeLucca, Ronald J. Weachock, Barry J. Dutt, Frank A. Baiocchi, John W. Osenbach
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Abstract
An electronic device comprising a bond pad on a substrate and a wire bonded to the bond pad. The device further comprises an intermetallic compound interface located between the bond pad and the wire and a silicon nitride or silicon carbonyl layer covering the intermetallic compound interface
Claims20
A method of manufacturing an electronic device, comprising:
- forming a wire bond, including:
- providing a bond pad on a substrate;
- bonding a wire to the bond pad, thereby forming an intermetallic compound interface;
- and
- forming a silicon nitride or silicon carbonyl layer that covers an outer surface of the intermetallic compound interface.
2 more elements
A method of manufacturing an electronic device, comprising:
- forming a wire bond, including:
- providing a bond pad on a substrate;
- bonding a wire to the bond pad, thereby forming an intermetallic compound interface located between the bond pad and the wire;
- and
- forming a silicon nitride or silicon carbonyl layer that covers an outer surface of the intermetallic compound interface, wherein:
- the silicon carbonyl layer has an elemental formula of Si(CO)n (n=1-4), and
- the intermetallic compound interface includes a first intermetallic compound layer that is adjacent to the wire, and a second intermetallic compound layer that is adjacent to the bond pad, wherein the second intermetallic compound layer has a larger average grain size than the first intermetallic compound layer.
4 more elements
A method of manufacturing an electronic device, comprising:
- forming a wire bond, including:
- providing a bond pad on a substrate;
- bonding a wire to the bond pad, thereby forming an intermetallic compound interface;
- and
- forming a silicon nitride or silicon carbonyl layer that covers an outer surface of the intermetallic compound interface, wherein:
- the silicon carbonyl layer has an elemental formula of Si(CO)n (n=1-4), and
- the intermetallic compound interface includes a first intermetallic compound layer that is adjacent to the wire, and a second intermetallic compound layer that is adjacent to the bond pad.
4 more elements
Dependencies are inferred from the claim text.