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US 2014/0349474 A1Published application
Semiconductor device and method for manufacturing the same
AssigneeSK hynix Inc.
InventorsJeong Youl KIM, Ki Soo CHOI
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Abstract
A semiconductor device according to an embodiment of the present invention includes fuse patterns spaced apart from each other by a predetermined distance over a first interlayer insulation film; a second interlayer insulation film disposed between the fuse patterns over the first interlayer insulation film; and a capping film pattern formed over the fuse patterns and the second interlayer insulation films, the capping film pattern including a slot exposing the second interlayer insulation film.
Claims12
1-9. (canceled)
A method for manufacturing a semiconductor device comprising:
- forming a first interlayer insulation film over a semiconductor substrate;
- forming first and second fuse patterns spaced apart from each other by portions of a second interlayer insulation film formed over the first interlayer insulation film;
- forming a capping film over the first and second fuse patterns and the second interlayer insulation film;
- forming a capping film pattern;
- and
- forming a slot in the capping film pattern by etching a portion of the capping film disposed between the first and second fuse patterns.
3 more elements
Dependencies are inferred from the claim text.