Schottky diode and method for fabricating the same
AssigneeMagnaChip Semiconductor, Ltd.
InventorJin-Yeong Son
Life of this patent
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Abstract
A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the isolation layer and located at a left side of the isolation layer, a second conductive type well formed in the deep well along the outer sidewall of the isolation layer and located at a right side of the isolation layer, an anode electrode formed over the substrate and coupled to the deep well and the guard ring, and a cathode electrode formed over the substrate and coupled to the well. A part of the guard ring overlaps the isolation layer.
Claims9
A method for fabricating a Schottky diode, comprising:
- forming an isolation layer in a substrate in which a second conductive type deep well is formed;
- forming a second conductive type well in the deep well along an outer sidewall of the isolation layer to be located at one side of the isolation layer;
- forming a first conductive type guard ring in the deep well along the outer sidewall of the isolation layer to be located at an opposite side of the isolation layer in such a manner that a part of the guard ring overlaps the isolation layer;
- and
- forming an anode electrode over the substrate to be coupled to the deep well and the guard ring and simultaneously forming a cathode electrode coupled to the well over the substrate.
Dependencies are inferred from the claim text.