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US 2014/0349467 A1Published application
Semiconductor process
AssigneeUnited Microelectronics Corp.
InventorsMing-Hua Chang, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Yu-Shu Lin, Szu-Hao Lai
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Abstract
A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
Claims20
A semiconductor process, comprising:
- forming a gate on a substrate;
- forming a recess in the substrate beside the gate;
- and
- performing a surface modification process on a surface of the recess to modify the shape of the recess and change the contents of the surface.
1 more element
Dependencies are inferred from the claim text.