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US 2014/0349466 A1Published application
Wafer Supporting Structure and Method for Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAn-Li Ho, Chi-En Huang, Yi Jia Chen, Pu-Fang Chen, Cary Chia-Chung Lo
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Abstract
A method for forming a wafer supporting structure comprises growing a single crystal using a floating zone crystal growth process, forming a silicon ingot having an oxygen concentration equal to or less than 1 parts-per-million-atomic (ppma), slicing a wafer from the silicon ingot, cutting portions of the wafer to form a supporting structure through a mechanical lathe and applying a high temperature anneal process to the supporting structure.
Claims20
A device comprising:
- a supporting structure configured to support a wafer in a wafer boat, wherein:
- the supporting structure is of an oxygen content level equal to or less than 1 parts-per-million-atomic (ppma);
- and
- the wafer is of a wafer diameter equal to or greater than 300 mm.
1 more element
A method comprising:
- growing a single crystal using a floating zone crystal growth process;
- forming a silicon ingot having an oxygen concentration equal to or less than 1 parts-per-million-atomic (ppma);
- slicing a wafer from the silicon ingot;
- cutting portions of the wafer to form a supporting structure through a mechanical lathe;
- and
- applying a high temperature anneal process to the supporting structure.
3 more elements
A system comprising:
- a wafer boat comprising a plurality of columns;
- a plurality of grooves vertically spaced apart on at least one column;
- a supporting structure placed on a top surface of the groove, wherein the supporting structure is of an oxygen concentration less than or equal to 1 parts-per-million-atomic (ppma);
- and
- a wafer placed on the supporting structure.
2 more elements
Dependencies are inferred from the claim text.