Semiconductor structure and method for manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsYinxue Lv, Jinshun Bi, Jiajun Luo, Zhengsheng Han, Tianchun Ye
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Abstract
The present invention provides a method for improving anti-radiation performance of SOI structure comprising following steps: implementing particle implantations of high-energy neutrons, protons and γ-rays to an SOI structure, and then performing annealing process. The present invention aims to improving anti-radiation performance of SOI devices by means of introducing displacement damage into a buried oxide layer through implantation of high-energy particles.
Claims7
A method for improving anti-radiation performance of an SOI structure comprising following steps:
- a) implementing high-energy particle implantation to the SOI structure and then performing annealing process.
Dependencies are inferred from the claim text.