Trench power mosfet structure fabrication method
AssigneeSuper Group Semiconductor Co., Ltd.
InventorsHsiu-Wen HSU, Chun-Ying YEH, Yuan-Ming LEE
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Abstract
A trench power MOSFET structure and fabrication method thereof is provided. The fabrication method comprises following process. First, form an isolating trench. Then, form at least two doped regions around the isolating trench. The doped regions are adjacent and the doping concentrations of two doped regions are different. Form an isolating structure in the isolating trench. Wherein, the junction profiles of the two doped regions are made by on implantation method for moderate the electric field distribution and decreasing the conduction loss.
Claims6
A trench power MOSFET structure fabrication method, comprising:
- forming an isolating trench;
- forming two doped regions around the isolating trench,
- wherein the two doped regions are adjoining and the doping concentrations of two doped regions are different;
- and
- forming an isolating structure in the isolating trench.
Dependencies are inferred from the claim text.