Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorYoung Soo AHN
Life of this patent
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Abstract
In a semiconductor memory device, a plurality of control gates is stacked in a first region and a second region of a substrate. A plurality of interlayer insulating layers is stacked in a portion of the second region of the substrate. Each interlayer insulating layer is formed at the same level as a corresponding one of the control gates. A plurality of sub-control gates is stacked in the first and second regions region of the substrate and interposed between the control gates and the interlayer insulating layers. A common node penetrates the interlayer insulating layers and the sub-control gates.
Claims9
A method of manufacturing a semiconductor memory device, the method comprising:
- alternately forming first conductive layers and sacrificial layers on a substrate on which a first region and a second region are defined;
- forming slits through the first conductive layers and the sacrificial layers;
- forming first recess regions by etching the sacrificial layers exposed through the slits, wherein the sacrificial layers of the second region remain partially;
- forming second conductive layers in the first recess regions;
- and
- forming a common node penetrating the first conductive layers and the sacrificial layers remaining in the second region.
Dependencies are inferred from the claim text.