Back to results
US 2014/0349450 A1Published application
Techniques for providing a semiconductor memory device
AssigneeMicron Technology, Inc.
InventorsSerguei OKHONIN, Viktor KOLDIAEV, Mikhail NAGOGA, Yogesh LUTHRA
Life of this patent
Estimating the term…
Abstract
Techniques for providing a semiconductor memory device are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region and a second region. The apparatus may also include a body region disposed between the first region and the second region and capacitively coupled to a plurality of word lines, wherein each of the plurality of word lines is capacitively coupled to different portions of the body region.
Claims20
A method for manufacturing a semiconductor memory device comprising the steps of:
- doping a semiconductor material to form a first region, a second region, and a body region disposed between the first region and the second region, wherein the first region and the second region have opposing charge concentrations;
- forming at least one trench in the semiconductor material to expose side portions of the first region, the second region, and the body region;
- depositing an insulating material in the at least one trench to cover at least the side portion of the body region;
- and
- forming a plurality of word lines in the at least one trench, wherein each of the plurality of word lines is disposed apart from the side portion of the body region by the insulating material.
2 more elements
Dependencies are inferred from the claim text.