Silicon-based electronics with disabling feature

A method comprising:

• obtaining a structure including a semiconductor layer, an electrically insulating layer, and a substrate layer, the semiconductor layer comprising silicon and adjoining the insulating layer;
• forming electronic circuitry including a plurality of electrical components on the semiconductor layer;
• removing the substrate layer, thereby exposing a bottom surface of the insulating layer;
• depositing a chemically reactive layer in adjoining relation to the bottom surface of the insulating layer, the chemically reactive layer being corrosive to at least one of the electrical components, capable of generating a material corrosive to at least one of the electrical components upon activation, or capable of generating gas upon activation, and
• forming an encapsulation layer over the chemically reactive layer.