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US 2014/0349435 A1Published application
Thermoelectric semiconductor
AssigneesAdmatechs Co., Ltd., Toyota Jidosha Kabushiki Kaisha
InventorsJunya Murai, Yoshinori Okawauchi
Life of this patent
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Abstract
A thermoelectric semiconductor includes a matrix element that forms a matrix, and a dopant element having an atomic radius that is at least 1.09 times as large as the atomic radius of the matrix element.
Claims4
1-6. (canceled)
A method of fabricating a thermoelectric semiconductor that includes a matrix element that forms a matrix and a dopant element, comprising:
- using as the dopant element an element having a larger atomic radius than the matrix element,
- wherein the dopant element has an atomic radius at least 1.09 times as large as the atomic radius of the matrix element.
Dependencies are inferred from the claim text.