Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

A method of forming a perpendicular magnetic tunneling junction (MTJ), comprising:

• depositing a dielectric tunneling layer with (001) crystal texture;
• depositing an amorphous CoFeB free magnetic layer over the tunneling layer;
• depositing a crystallization barrier layer over the amorphous CoFeB free magnetic layer;
• depositing a magnetic anisotropy enhancing layer having (111) crystal texture over the crystallization barrier layer, and
• annealing the dielectric tunneling layer, free magnetic layer, crystallization barrier layer, and magnetic anisotropy enhancing layer at a temperature of at least 300° C. to impart (001) crystal texture to the amorphous CoFeB free magnetic layer.