Exposure photolithography methods

A method, comprising:

• forming a film of a photoresist composition on a substrate;
• exposing a first region of the film to radiation through a first mask having a first image pattern;
• and
• exposing a second region of the film to radiation through a second mask having a second image pattern,
• wherein the photoresist composition comprises:
• a polymer having a structure comprising at least one acid labile group;
• a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation, said photosensitive acid generator capable of generating a second amount of acid upon exposure to a second dose of radiation, said second amount of acid greater than said first amount of acid, said second dose of radiation greater than said first dose of radiation, wherein the photosensitive acid generator comprises (trifluoro-methylsulfonyloxy)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboximide (MDT), N-hydroxy-naphthalimide dodecane sulfonate (DDSN), or a combination thereof;
• and
• a photosensitive base generator capable of generating a first amount of base upon exposure to said first dose of radiation, said photosensitive base generator capable of generating a second amount of base upon exposure to said second dose of radiation, said first amount of base greater than said first amount of acid, said second amount of base less than said second amount of acid,
• wherein the photosensitive base generator is selected from the group consisting of quaternary ammonium salts, and,
• wherein the quaternary ammonium salts have the following structure
• wherein at least two groups of groups R3, R4, R8, and R9 are each independently an aryl or substituted aryl group, wherein at least one group of groups R3, R4, R8, and R9 is independently an alkyl, substituted alkyl, or substituted aryl group, and wherein A− is an anion.