Method for Forming Semiconductor Structure Having Opening

A method of forming a semiconductor structure having an opening, comprising:

• providing a substrate, wherein a first region and a second region are defined on the substrate and an overlapping area of the first region and the second region is defined as a third region, wherein the third region has a length defined by the first region and a width defined by the second region, wherein the length is greater than the width;
• forming a material layer on the substrate;
• forming a first hard mask and a second hard mask on the material layer, wherein the first hard mask is disposed on the second hard mask;
• removing the first hard mask in the first region to form a patterned first hard mask;
• after forming the patterned first hard mask, removing the second hard mask in the third region to form a patterned second hard mask;
• and
• patterning the material layer by using the patterned second hard mask layer as a mask, to form at least an opening only in the third region.