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US 2014/0349219 A1Published application
Exposure method, reflection type mask, and semiconductor device manufacturing method
AssigneeKabushiki Kaisha Toshiba
InventorsHiroyuki MIZUNO, Yosuke Okamoto, Takeshi Koshiba, Satoshi Nagai
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Abstract
According to embodiments, an exposure method is provided. In the exposure method, a transmittance of a pellicle is adjusted every position of a mask pattern included in a reflection type mask. And when adjusting the transmittance of the pellicle, a film thickness of the pellicle is adjusted on the basis of a transmittance correction amount. Thereafter, exposure is conducted onto a substrate by using the reflection type mask with the pellicle stuck thereon.
Claims20
An exposure method comprising:
- adjusting a transmittance of a pellicle every position of a mask pattern included in a reflection type mask;
- and
- conducting exposure onto a substrate by using the reflection type mask with the pellicle stuck thereon.
A reflection type mask comprising:
- a mask pattern;
- and
- a pellicle adjusted in transmittance every position of the mask pattern.
A semiconductor device manufacturing method comprising:
- adjusting a transmittance of a pellicle every position of a mask pattern included in a reflection type mask;
- conducting exposure onto a substrate by using the reflection type mask with the pellicle stuck thereon;
- and
- forming a resist pattern on the substrate by developing the substrate.
1 more element
Dependencies are inferred from the claim text.