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AssigneeMitsubishi Chemical Corporation
InventorsMasanori YAMAZAKI, Mari ABE, Tomohide MURASE, Yasuhiro Kawase, Makoto IKEMOTO, Hideki KIRITANI, Yasunori MATSUSHITA
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To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.
Agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g and a total pore volume of at most 2.15 cm3/g, and the surface of which is constituted by boron nitride primary particles having an average particles size of at least 0.05 μm and at most 1 μm.
Agglomerated boron nitride particles which are spherical, and on the surface of which boron nitride primary particles having an average particle size of at most 1 μm are radially arranged.
A process for producing agglomerated boron nitride particles, comprising a granulation step using a slurry containing a material boron nitride powder,
A composition comprising a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s and a filler (B) comprising boron nitride which has a crystallite size (Lc) of the 002 plane of at least 450 [Å], a crystallite size (La) of the 100 plane of at least 500 [Å], the crystallize size (Lc) and the crystallite size (La) satisfying the following formula (i), and has an oxygen content of at most 0.30 wt %:
Dependencies are inferred from the claim text.