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US 2014/0349033 A1Published application
Method For Forming Film By Plasma-Assisted Deposition Using Two-Frequency Combined Pulsed RF Power
AssigneeASM IP Holding B.V.
InventorsYuya Nonaka, Fumitaka Shoji, Hiroki Arai
Life of this patent
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Abstract
A method for forming a dielectric film on a substrate by plasma-assisted deposition, includes: introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed; and applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction. The RF power is comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.
Claims17
A method for forming a dielectric film on a substrate by plasma-assisted deposition, comprising:
- introducing a Si-containing process gas to a reaction space wherein a substrate having a surface with patterned recesses is placed;
- and
- applying RF power to the process gas in the reaction space to form a dielectric film on the surface by plasma reaction, said RF power comprised of pulses of high-frequency RF power and pulses of low-frequency RF power, which overlap and are synchronized.
Dependencies are inferred from the claim text.