Film deposition method
AssigneeTokyo Electron Limited
InventorsHitoshi KATO, Tatsuya TAMURA, Takeshi KUMAGAI
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Abstract
A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.
Claims18
A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, the method comprising:
- a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate;
- a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed;
- and
- a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.
Dependencies are inferred from the claim text.