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US 2014/0346674 A1Published application
Graphene-metal e-fuse
AssigneeInternational Business Machines Corporation
InventorsJunjing Bao, Griselda Bonilla, Samuel S. Choi, Ronald G. Filippi, Andrew T. Kim, Naftali E. Lustig, Andrew H. Simon
Life of this patent
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Abstract
A structure including an Mx level including a first Mx metal, a second Mx metal, and a third Mx metal abutting and electrically connected in sequence with one another, the second Mx metal including graphene, and an Mx+1 level above the Mx level, the Mx+1 level including an Mx+1 metal and a via, the via electrically connects the third Mx metal to the Mx+1 metal in a vertical orientation.
Claims20
A structure comprising:
- an Mx level comprising a first Mx metal, a second Mx metal, and a third Mx metal abutting and electrically connected in sequence with one another, the second Mx metal comprising graphene;
- and
- an Mx+1 level above the Mx level, the Mx+1 level comprising an Mx+1 metal and a via, the via electrically connects the third Mx metal to the Mx+1 metal in a vertical orientation.
A method comprising:
- forming an Mx level comprising a first Mx metal, a second Mx metal, and a third Mx metal abutting and electrically connected in sequence with one another, the second Mx metal comprising graphene;
- and
- forming an Mx+1 level above the Mx level, the Mx+1 level comprising an Mx+1 metal and a via, the via electrically connecting the third Mx metal to the Mx+1 metal in a vertical orientation.
A method comprising:
- etching, in an Mx dielectric layer, a first trench and a second trench;
- filling the first trench and the second trench with a metal to form a first Mx metal, and a second Mx metal;
- forming a third trench abutting and in between the first Mx metal and the second Mx metal;
- filling the third trench with graphene to form a third Mx metal, the graphene of the third Mx metal is in direct contact with the metal of both the first Mx metal and the second Mx metal;
- etching, in an Mx+1 dielectric layer, a dual damascene opening comprising a via opening and a trench, the via opening being directly above and exposing an upper surface of the second Mx metal;
- and
- filling the via opening and the trench with the metal to form an Mx+1 via and an Mx+1 metal, the Mx+1 via being adjacent to the third Mx metal and in direct contact with the second Mx metal in the Mx dielectric layer.
4 more elements
Dependencies are inferred from the claim text.