Process for producing dcb substrates
OwnerJurgen Schulz-Harder, Karsten Schmidt +1inventors
InventorsJurgen Schulz-Harder, Karsten Schmidt, Karl Exel
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Abstract
Process for producing DCB substrates having in each case at least one ceramic layer which is essentially made up of aluminium nitride (AlN) and is provided on at least one surface side with an intermediate layer which is essentially made up of aluminium oxide and also has at least one metallization formed by a metal layer or metal foil on the intermediate layer
Claims14
A process for producing DCB substrates having at least one ceramic layer (2) consisting essentially of aluminium nitride (ALN), wherein at least one surface side of the at least one ceramic layer is has an intermediate layer consisting essentially of aluminium oxide Al2O3), and at least one metallisation formed by a metal layer on the intermediate layer, wherein a green foil is produced from the aluminium nitride and sintering agents by casting, calendering and/or compacting, and a blank ceramic layer is thereby produced from the green foil by sintering, and wherein the intermediate layer is thereby produced on the at least one surface side of the at least one ceramic layer, and the metal layer is then bonded with the intermediate layer by DCB bonding, wherein before production of the intermediate layer on the surface side of the at least one ceramic layer, a surface layer resulting from the sintering containing impurities and/or reaction products is removed therefrom.
A process for producing DCB substrates comprising the steps of:
- 1) placing at least one oxidised metal foil made from copper or a copper alloy on top of at least one surface side of a cleaned aluminium nitride (AlN) ceramic layer;
- 2) heating the at least one oxidised metal foil and the cleaned aluminium nitride (AlN) ceramic layer to a temperature between 400° C. and 1083° C.;
- 3) removing the at least one oxidised metal foil, after cooling the at least one oxidised metal foil and the cleaned aluminium nitride (AlN) ceramic layer;
- 4) oxidising the cleaned aluminium nitride (AlN) ceramic layer at a temperature of 850° C.-1450° C. in an oxygen-containing atmosphere to produce an intermediate layer on at least one surface side of the cleaned aluminium nitride (AlN) ceramic layer;
- and
- 5) DCB bonding the at least one oxidised metal foil with the at least one surface side of the cleaned aluminium nitride (AlN) ceramic layer.
A process for producing DCB substrates, comprising the steps of:
- 1) oxidising the a cleaned aluminium nitride (AlN) ceramic layer at a temperature from 800° C.-1450° C to form an oxidised ceramic layer;
- 2) DCB bonding at least one metal foil made from copper or a copper alloy on at least one surface side of the oxidised ceramic layer;
- 3) removing the at least one metal foil by etching;
- 4) oxidising the ceramic layer again, at a temperature from 800° C.-1450° C;
- and
- 5) DCB bonding the at least one metal foil on at least one surface side of the ceramic layer.
Dependencies are inferred from the claim text.