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US 2014/0322373 A1Published application
Forming spherical semiconductive nanoparticles
AssigneeRaytheon Company
InventorKalin Spariosu
Life of this patent
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Abstract
In certain embodiments, a material comprising one or more semiconductive substances is vaporized to generate a vapor phase condensate. The vapor phase condensate is allowed to form nanoparticles. The nanoparticles are annealed to yield substantially spherical nanoparticles.
Claims13
A system comprising:
- a vacuum chamber;
- a material hopper coupled to the vacuum chamber;
- a heating element disposed within the vacuum chamber;
- and
- a quenchant gas supplier disposed within the vacuum chamber;
- the vacuum chamber configured to provide an near vacuum volume;
- the material hopper configured to direct material to the heating element, the material comprising one or more semiconductive substances;
- the heating element configured to raise the temperature of the material to vaporize the material to generate a vapor phase condensate;
- the quenchant gas supplier configured to introduce a quenchant gas into the vacuum chamber to cool the vapor phase condensate to form a plurality of nanoparticles;
- and
- the heating element configured to raise the temperature of the nanoparticles to anneal the nanoparticles to yield substantially spherical nanoparticles.
8 more elements
One or more non-transitory computer readable media storing logic configured to provide instructions to:
- vaporize material to generate a vapor phase condensate, the material comprising one or more semiconductive substances;
- allow the vapor phase condensate to form a plurality of nanoparticles;
- and
- anneal the nanoparticles to yield a plurality of substantially spherical nanoparticles.
1 more element
Dependencies are inferred from the claim text.