Plasma processing apparatus
AssigneeHitachi High-Technologies Corporation
InventorsAkira KAGOSHIMA, Daisuke SHIRAISHI, Satomi INOUE, Shigeru NAKAMOTO, Shoji IKUHARA, Toshihiro MORISAWA
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AssigneeHitachi High-Technologies Corporation
InventorsAkira KAGOSHIMA, Daisuke SHIRAISHI, Satomi INOUE, Shigeru NAKAMOTO, Shoji IKUHARA, Toshihiro MORISAWA
Estimating the term…
A plasma processing apparatus including: a monitor device which monitors a process quantity generated at plasma processing; a monitor value estimation unit which has monitor quantity variation models for storing change of a monitor value of the process quantity in accordance with the number of processed specimens and which estimates a monitor value for a process of a next specimen by referring to the monitor quantity variation models; and a control quantity calculation unit which stores a relation between a control quantity for controlling the process quantity of the vacuum processing device and a monitor value and which calculates the control quantity based on a deviation of the estimated monitor value from a target value to thereby control the process quantity for the process of the next specimen. Thus, a process model indicating variation of the state of a process processing apparatus can be added to a control loop in such run-to-run control that process conditions are changed according to each wafer process, so that stable processed results can be obtained even when variation occurs in processes.
A run-to-run control method for a plasma processing method for applying plasma processing by run-to-run control to specimens, comprising the steps of:
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