Methods for conformal treatment of dielectric films with low thermal budget
AssigneeApplied Materials, Inc.
InventorsHENG PAN, MATTHEW SCOTT ROGERS, CHRISTOPHER S. OLSEN
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Abstract
Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
Claims20
A method of treating a dielectric layer disposed on a substrate supported in a process chamber, comprising:
- (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time;
- (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius;
- and
- (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
A method of treating a dielectric layer disposed on a substrate supported in a process chamber, comprising:
- (a) exposing the dielectric layer to an active radical species formed using a remote plasma source for a first period of time of about 1 to about 200 seconds;
- (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius;
- and
- (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
A method of treating a dielectric layer disposed on a substrate supported in a process chamber, comprising:
- (a) exposing the dielectric layer to an active radical species formed using a remote plasma source for a first period of time of about 1 to about 200 seconds;
- (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius in a spike anneal process;
- and
- (c) maintaining the peak temperature for a second period of time of less than about 2 seconds.
Dependencies are inferred from the claim text.