High density plasma reactor with multiple top coils
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Ching LO, Po-Hsiung LEU, Tzu-Chun LIN, Ding-I LIU, Jen-Chi CHANG, Ho-Ta CHUANG
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Abstract
A plasma reactor includes an enclosure having a top and a bottom and defining a processing chamber. Inlets are formed in the enclosure for injecting process gas into the chamber. An outlet is formed in the enclosure for withdrawing gas from the chamber. A platform is positioned to support a wafer in the chamber above the bottom. A plurality of coils is positioned above the top of the chamber. Each coil is coupled to a radio frequency generator.
Claims20
A plasma reactor, which comprises:
- an enclosure having a side wall, a top and a bottom to define a processing chamber;
- a plurality of inlets in the enclosure for injecting process gas into the chamber;
- an outlet in the enclosure for withdrawing gas from the chamber;
- a platform for supporting a wafer in the chamber above the bottom;
- and
- a plurality of coils positioned at the top of the chamber, wherein each respective coil is coupled to a respective radio frequency generator.
In a plasma reactor having a chamber, apparatus comprising:
- a pedestal adapted to support a semiconductor wafer;
- a plurality of coils positioned at an end of the chamber opposite the pedestal;
- a plurality of radio frequency generators, wherein each respective coil is coupled to a respective radio frequency generator.
A method comprising:
- placing a semiconductor wafer in a processing chamber having a plurality of radio frequency coils;
- setting individual power levels of each of a plurality of radio frequency generators, each radio frequency generator coupled to a respective one of the plurality of radio frequency coils;
- and
- generating a plasma in the processing chamber using the plurality of radio frequency coils for depositing a film on the semiconductor wafer.
Dependencies are inferred from the claim text.