Post-Deposition Treatment Methods For Silicon Nitride

A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:

• exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface;
• purging excess silicon precursor;
• exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor;
• purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.;
• and
• exposing the film comprising SiN to a plasma nitridation process or a UV treatment to provide a treated film.

A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:

• exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface;
• purging excess silicon precursor;
• exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor;
• purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.;
• and
• exposing the film comprising SiN to a decoupled plasma nitridation process.