PEALD of Films Comprising Silicon Nitride
AssigneeApplied Materials, Inc.
InventorsVictor Nguyen, Woong Jae Lee, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty
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Abstract
Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
Claims20
A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
- exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface;
- purging excess silicon precursor;
- exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor;
- and
- purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
The method of claim 9, wherein the film comprising SiN has a thickness of about 50 to about 500 Angstroms.
A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
- exposing a substrate surface to a precursor comprising silicon and nitrogen to provide a precursor silicon and nitrogen at the substrate surface;
- purging excess silicon precursor;
- exposing the substrate surface to an ionized reducing agent;
- purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.
A method of plasma enhanced atomic layer deposition of a film comprising SiN, the method comprising:
- exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface;
- purging excess silicon precursor;
- exposing the substrate surface to an ionized reducing agent comprising a nitrogen precursor;
- purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.;
- repeating (a)-(d);
- exposing the film comprising SiN to a plasma treatment once about 10 to about 40 Angstroms of film have been deposited.
Dependencies are inferred from the claim text.