Methods for forming silicon nitride thin films
AssigneeASM IP Holding B.V.
InventorsAntti Niskanen, Suvi Haukka, Jaakko Anttila
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Abstract
The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si3X8 silicon precursor, such as octachlorotrisilane (OCTS) Si3Cl8, into a reaction space containing a substrate, (ii) introducing a nitrogen containing plasma into the reaction space, and wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until an atomic layer nitride film having a desired thickness is obtained.
Claims19
A method of forming a silicon nitride film by plasma enhanced atomic layer deposition (PEALD) comprising the steps of;
- i. introducing an octahalotrisilane Si3X8 silicon precursor into a reaction space containing a substrate,
- ii. introducing a nitrogen containing plasma into the reaction space,
- iii. wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until a film comprising silicon nitride having a desired thickness is obtained.
A method of forming a silicon nitride film by plasma enhanced atomic layer deposition (PEALD) comprising the steps of;
- i. introducing an octahalotrisilane Si3X8 silicon precursor into a reaction space containing a substrate,
- ii. creating a nitrogen containing plasma within the reaction space,
- iii. wherein steps (i), (ii) and any steps in between constitute one cycle, and repeating said cycles a plurality of times until a film comprising silicon nitride having a desired thickness is obtained.
Dependencies are inferred from the claim text.