Atomic Layer Deposition Of Films Comprising Si(C)N Using Hydrazine, Azide And/Or Silyl Amine Derivatives
OwnerDavid Thompsoninventor
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Abstract
Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R2N—NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently selected from organosilicons, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.
Claims20
A method of depositing a film comprising Si(C)N, the method comprising exposing a substrate surface to a silicon precursor and a co-reactant, wherein the silicon precursor contains at least one Si—X bond, wherein X is a halogen, and the co-reactant comprises a compound selected from the group consisting of N═N═N—R, R2N—NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently selected from silyl, monomethyl silyl, dimethyl silyl and trimethyl silyl, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.
A method of plasma enhanced atomic layer deposition of a film comprising Si(C)N, the method comprising
- a. exposing a substrate surface to a silicon precursor, wherein the silicon precursor contains at least one Si—X bond, wherein X is a halogen;
- and
- b. subsequently exposing a substrate to a co-reactant and striking a plasma, wherein the co-reactant comprises a compound selected from the group consisting of N═N═N—R and R2N—NR2, wherein q has a value of between 1 and 3, and each R is independently selected from C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.
The method of claim 114, wherein the silicon precursor comprises monochlorosilane.
A method of depositing a film comprising Si(C)N, the method comprising exposing a substrate surface to hexachlorodisilane, dichlorosilane or monochlorosilane, wherein X is a halogen, and the co-reactant comprises a compound selected from the group consisting of N═N═N—R, R2N—NR2, and (R3Si)qNH3-q, wherein q has a value of between 1 and 3, and each R is independently C1-C6 alkyl.
Dependencies are inferred from the claim text.