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US 2014/0273525 A1Published application
Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films
AssigneeIntermolecular, Inc.
InventorsKurt Pang, Sean Barstow, Chi-I Lang, Michael Miller, Sandip Niyogi, Prashant B. Phatak
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Abstract
Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 Å-thick Al2O3 films.
Claims20
A method of forming a metal oxide film on a substrate in a process chamber, the method comprising:
- exposing the substrate to a metal precursor;
- performing a first purge of the chamber;
- exposing the substrate to an oxygen precursor;
- and
- performing a second purge of the chamber;
- wherein the second purge has a duration longer than about 60 seconds.
3 more elements
Dependencies are inferred from the claim text.