Methods for forming layers on semiconductor substrates

A method of forming a layer on a substrate, comprising:

• providing a substrate to a substrate support in a process chamber, the process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust;
• providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust, wherein the process gas comprises a nitrogen containing gas;
• providing a plasma formed from a nitrogen containing gas from the plasma port to the substrate in a second direction that is different from the first direction to form a nitrogen containing layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle of about 56 to about 71 degrees;
• and
• rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the nitrogen containing layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.

A computer readable medium having instructions stored thereon that, when executed, cause a method of forming a layer on a substrate disposed on a substrate support in a process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust to be performed, the method comprising:

• providing a process gas from the gas port in a first direction such that the process gas flows across a surface of the substrate from the gas port to the exhaust;
• providing a plasma from the plasma port to the substrate in a second direction that is different from the first direction to form a layer, wherein the plasma is provided such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular;
• and
• rotating the substrate in a first direction while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.