Vbd and tddb improvement thru interface engineering
OwnerLi-Qun XIA, Weifeng YE +5inventors
InventorsLi-Qun XIA, Weifeng YE, Xiaojun ZHANG, Mei-yee SHEK, Mihaela BALSEANU, Victor NGUYEN, Derek R. WITTY
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Abstract
Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure.
Claims23
A method of processing a low k dielectric film, comprising:
- supporting in a processing chamber a substrate having a low k dielectric film deposited thereon;
- and
- exposing a surface of a low k dielectric film formed over a substrate to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has one or more Si—N—Si linkages in the molecular structure.
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A method of processing a damaged low k dielectric film, comprising:
- subjecting a surface of a low k dielectric film to a plasma generated from a carbon-containing precursor gas comprising aminosilane to form a conformal carbon-containing film on the surface of the low k dielectric film.
A method of processing a low k dielectric film, comprising:
- exposing a surface of a low k dielectric film formed over a substrate to a plasma formed from a carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has one or more Si—N—Si linkages in the molecular structure;
- and
- exposing the substrate to a plasma formed from a silicon-containing precursor to form a barrier layer onto the conformal carbon-containing film.
Dependencies are inferred from the claim text.