Trialkylsilane silicon precursor compound, method of forming a layer using the same, and semiconductor device including the layer

A method of forming a layer, the method comprising:

• forming a dielectric layer using a trialkylsilane-based silicon precursor compound expressed by the following chemical formula 1,
• wherein each of R1, R2, and R3 is hydrogen or an alkyl having 1˜5 carbon(s);
• R1, R2, and R3 are not all hydrogen;
• X is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3;
• R* is hydrogen or an alkyl group having 1˜5 carbon(s);
• and the dielectric layer is a silicon-doped metal oxide layer or a silicon-doped metal nitride layer.

A method of forming a dielectric layer, comprising:

• forming a first sub-dielectric layer of a metal oxide or a metal nitride;
• forming a second sub-dielectric layer of a silicon oxide or a silicon nitride on the first sub-dielectric layer using a trialkylsilane-based silicon precursor compound expressed by the following chemical formula 1,
• wherein each of R1, R2, and R3 is hydrogen or an alkyl having 1˜5 carbon(s);
• R1, R2, and R3 are not all hydrogen;
• X is one of hydrogen, a hydroxyl group, an amide group, an alkoxide group, a halide group, or Si(R*)3;
• R* is hydrogen or an alkyl group having 1˜5 carbon(s);
• and
• heat treating the first sub-dielectric layer and the second sub-dielectric layer to diffuse silicon atoms from the second sub-dielectric layer into the first sub-dielectric layer.