Substrate processing apparatus and substrate processing method

A substrate processing apparatus for processing a substrate, comprising:

• a substrate supporting part for supporting an outer edge portion of a substrate in a horizontal state;
• a substrate rotating mechanism for rotating said substrate supporting part together with said substrate around a central axis directed in a vertical direction;
• a processing liquid supply nozzle for supplying a processing liquid having a temperature higher than that of said substrate onto an upper surface of said substrate;
• at least one heating liquid supply nozzle for supplying a heating liquid having a temperature higher than that of said substrate onto a lower surface of said substrate between said central axis and an outer peripheral edge of said substrate;
• and
• at least one heating gas supply nozzle for ejecting heating gas having a temperature higher than that of said substrate toward said lower surface of said substrate between said central axis and said outer peripheral edge of said substrate.

A substrate processing method of processing a substrate, comprising:

• a) supplying a processing liquid having a temperature higher than that of a substrate onto an upper surface of said substrate while rotating said substrate in a horizontal state around a central axis directed in a vertical direction;
• b) supplying a heating liquid having a temperature higher than that of said substrate onto a lower surface of said substrate between said central axis and an outer peripheral edge of said substrate from at least one heating liquid supply nozzle concurrently with said operation a);
• and
• c) ejecting heating gas having a temperature higher than that of said substrate toward said lower surface of said substrate between said central axis and said outer peripheral edge of said substrate from at least one heating gas supply nozzle while rotating said substrate after stopping supply of said processing liquid and said heating liquid, to thereby dry said substrate.

A substrate processing method of processing a substrate, comprising:

• a) supplying a processing liquid having a temperature higher than that of a substrate onto an upper surface of said substrate while rotating said substrate in a horizontal state around a central axis directed in a vertical direction;
• b) supplying a heating liquid having a temperature higher than that of said substrate onto a lower surface of said substrate between said central axis and an outer peripheral edge of said substrate from at least one heating liquid supply nozzle concurrently with said operation a);
• and
• c) supplying heating gas having a temperature higher than that of said substrate into a space below said substrate from at least one heating gas supply nozzle concurrently with said operation b).