Non-volatile memory devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMinchul Kim, Jae-Hwang Sim, Sangbin Song
Life of this patent
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Abstract
A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.
Claims9
A method of fabricating a non-volatile memory device comprising:
- providing a charge storage layer on a substrate;
- providing a control base gate layer on the charge storage layer;
- providing a control metal gate layer on the control base gate layer;
- providing a control gate mask pattern on the control metal gate layer;
- etching the control metal gate layer and the control base gate layer using the control gate mask pattern as an etch mask to form a first control metal gate pattern and a control base gate pattern;
- etching sidewalls of the first control metal gate pattern to form a second control metal gate pattern, so that a width of the second control metal gate pattern is less than a width of the control gate mask pattern;
- and
- providing an oxidation-resistant spacer at sidewalls of the second control metal gate pattern positioned between the control gate mask pattern and the control base gate pattern.
A method of fabricating a non-volatile memory device comprising:
- providing a charge storage region on a substrate;
- providing a control gate electrode layer comprising metal on the charge storage region;
- providing a control gate mask pattern on the control gate electrode layer;
- etching the control gate electrode layer using the control gate mask pattern as an etch mask to form a first control gate electrode pattern;
- etching sidewalls of the first control gate electrode pattern to form a second control gate electrode pattern, so that a width of the second control gate electrode pattern is less than a width of the control gate mask pattern;
- and
- providing an oxidation-resistant spacer at sidewalls of the second control gate electrode pattern positioned between the control gate mask pattern and the charge storage region.
Dependencies are inferred from the claim text.