Pulsed dc plasma etching process and apparatus
OwnerSubhash Deshmukh, He Ren +1inventors
InventorsSubhash Deshmukh, He Ren, Jingjing Liu
Life of this patent
Estimating the term…
Abstract
In one aspect, a plasma etching apparatus is disclosed. The plasma etching apparatus includes a chamber body having a process chamber adapted to receive a substrate, an RF source coupled to an RF electrode, a pedestal located in the processing chamber and adapted to support a substrate, a plurality of conductive pins adapted to contact and support the substrate during processing, and a DC bias source electrically coupled to the plurality of conductive pins. Etching methods are provided, as are numerous other aspects.
Claims20
A plasma etching apparatus, comprising:
- a chamber body having a process chamber adapted to receive a substrate;
- an RF source coupled to an RF electrode;
- a pedestal located in the processing chamber and adapted to support a substrate;
- a plurality of conductive pins adapted to contact and support the substrate during processing;
- and
- a DC bias source coupled to the plurality of conductive pins.
A plasma etching method, comprising:
- providing the substrate within a process chamber;
- providing a process gas to the process chamber;
- exposing the process gas in the process chamber to RF pulses;
- and
- providing DC bias pulses to the substrate through conductive pins in electrically conductive contact with the substrate.
Dependencies are inferred from the claim text.