Electric pressure systems for control of plasma properties and uniformity

An apparatus for treating a substrate, comprising:

• a plasma processing chamber comprising a chamber wall;
• a substrate holder disposed in the processing chamber, for receiving a substrate to be treated;
• a gas supply system that can supply a gas mixture to the plasma processing chamber;
• a plasma source disposed in or adjacent to the plasma processing chamber, the plasma source being configured to ionize the gas mixture into a plasma;
• an electrode disposed inside the plasma processing chamber and along the chamber wall between the plasma source and the substrate holder;
• a ring electrode disposed between the electrode and the substrate holder;
• a boundary power supply comprising a first terminal connected to the electrode and a second terminal connected to the ring electrode.

An apparatus for treating a substrate, comprising:

• a plasma processing chamber comprising a chamber wall;
• a substrate holder disposed in the processing chamber, for receiving a substrate to be treated;
• a gas supply system for supplying a gas mixture to the processing chamber;
• a plasma source for energizing the gas mixture in the plasma processing chamber, into a plasma;
• an electrode disposed in the chamber wall;
• a ring electrode disposed in the plasma processing chamber and adjacent to the substrate holder;
• and
• a DC power supply with an output terminal connected to the electrode and the ring electrode.