Inductively coupled plasma processing apparatus and plasma processing method using the same

A plasma processing method, comprising:

• loading a substrate into a chamber of an inductively coupled plasma process apparatus, the inductively coupled plasma process apparatus comprising the chamber including a window in an upper portion thereof, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode located on the upper portion of the chamber with the window interposed between the upper electrode and the lower electrode, and a conductive shield member arranged within the chamber to cover the window;
• introducing a process gas into the chamber;
• applying first and second radio frequency signals to the lower electrode and the upper electrode respectively to perform a plasma process on the substrate;
• and
• applying a shield signal to the conductive shield member during the plasma process, the shield signal being synchronized with the second radio frequency signal.