Methods of forming a masking layer for patterning underlying structures

A method, comprising:

• forming a patterned hard mask layer above a structure, wherein said patterned hard mask layer is comprised of a first plurality of line-type features that intersect a second plurality of line-type features to thereby define a plurality of discrete openings, and wherein said first plurality of line-type features and said second plurality of line-type features are made of different materials;
• forming a patterned etch mask above said patterned hard mask layer that exposes at least one, but not all, of said plurality of discrete openings;
• and
• performing at least one etching process through said patterned etch mask and said at least one exposed opening in said patterned hard mask layer to define an opening in said structure.

A method, comprising:

• forming a patterned hard mask layer above a structure, said patterned hard mask layer comprised of a plurality of intersecting line-type features that define a plurality of discrete openings that have a substantially rectangular configuration;
• forming a patterned etch mask above said patterned hard mask layer that exposes at least one, but not all, of said plurality of discrete openings;
• and
• performing at least one etching process through said patterned etch mask and said at least one exposed opening in said patterned hard mask layer to define an opening in said structure.

A method, comprising:

• forming a first layer of insulating material;
• forming an etch stop layer above said first layer of insulating material;
• forming a second layer of insulating material above said etch stop layer;
• forming a patterned hard mask layer comprised of a plurality of discrete openings above said second layer of insulating material;
• forming a first patterned etch mask above said patterned hard mask layer that exposes at least one, but not all, of said plurality of discrete openings;
• performing at least one first etching process through said patterned etch mask and said at least one exposed opening in said patterned mask layer to define an opening in said second layer of insulating material, wherein said opening in said second layer of insulating material exposes said etch stop layer;
• removing said first patterned etch mask;
• forming a second patterned etch mask above said patterned hard mask layer that exposes at least one, but not all, of said plurality of discrete openings;
• performing at least one second etching process to remove portions of said patterned hard mask layer;
• after performing said at least one second etching process, performing at least one third etching process to remove exposed portions of said etch stop layer and thereby expose portions of said first layer of insulating material;
• performing at least one fourth etching process to remove exposed portions of said first and second layers of insulating material to thereby define at least one trench in said second layer of insulating material and at least one opening in said first layer of insulating material;
• and
• forming a conductive structure in each of said at least one trench and said at least one opening.