Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
AssigneeTokyo Electron Limited
InventorsMark H. Somervell, David Hetzer, Lior Huli
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsMark H. Somervell, David Hetzer, Lior Huli
Estimating the term…
A method is provided for preparing a prepatterned substrate for use in DSA integration. In one example, the method includes removing a radiation-sensitive material pattern overlying a patterned cross-linked polystyrene copolymer layer by a) exposure to a solvent vapor, b) exposure to a liquid solvent, and c) repeating steps a)-b) until the radiation-sensitive material pattern is completely removed. In another example, the method includes removing a neutral layer by affecting removal of an underlying patterned radiation-sensitive material layer, which includes swelling the neutral layer; and removing the radiation-sensitive material pattern and the swollen neutral layer in portions by exposing the swollen layer and pattern to a developer solution. Swelling the neutral layer includes a) exposure to a solvent vapor; b) exposure to a liquid solvent; and c) repeating steps a)-b) until the neutral layer is sufficiently swollen to allow penetration of the developing solution through the swollen neutral layer.
A method for forming a prepattern, comprising:
A method for forming a prepattern, comprising:
Dependencies are inferred from the claim text.