Passive control for through silicon via tilt in icp chamber
AssigneeApplied Materials, Inc.
InventorsDavid REYLAND, Dung Huu LE, Saravjeet SINGH, Madhava Rao YALAMANCHILI
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Abstract
Embodiments of the present disclosure generally provide apparatus and methods for improving process result near the edge region of a substrate being processed. One embodiment of the present disclosure provides a cover ring for improving process uniformity. The cover ring includes a ring shaped body, and an extended lip extending radially inwards from the ring shaped body. An inner edge of the extended lip forms a central opening to expose a processing region on a substrate being processed, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening.
Claims20
A cover ring for improving process uniformity, comprising:
- a ring shaped body;
- and
- an extended lip extending radially inwards from the ring shaped body, wherein an inner edge of the extended lip forms a central opening to expose a processing region on a substrate being processed, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening.
A semiconductor processing chamber, comprising:
- a chamber body defining a processing volume;
- a substrate support disposed in the processing volume for supporting a substrate thereon;
- a plasma generator disposed outside the chamber body for generating a plasma within the processing volume;
- and
- a cover ring movably disposed over the substrate support for improving process uniformity, wherein the cover ring comprises:
- a ring shaped body;
- and
- an extended lip extending radially inwards from the ring shaped body, wherein an inner edge of the extended lip forms a central opening to expose a processing region on the substrate supported by the substrate support, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening.
A method for processing a substrate support, comprising:
- positioning a substrate on a substrate support in a processing chamber;
- lowering a cover ring to the substrate support to cover an edge region of the substrate, wherein the cover ring comprises:
- a ring shaped body;
- and
- an extended lip extending radially inwards from the ring shaped body, wherein an inner edge of the extended lip forms a central opening to expose a processing region on the substrate supported by the substrate support, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening;
- and
- processing the substrate with one or more processing gases supplied to the processing chamber.
The method of claim 19, wherein processing the substrate comprises:
- generating an inductively coupled plasma in the processing chamber;
- and
- applying a bias power to an electrode in the substrate support.
Dependencies are inferred from the claim text.