Semiconductor device and method for manufacturing semiconductor device

A method for manufacturing a semiconductor device, comprising:

• forming a first insulating layer on a semiconductor substrate;
• forming a first groove, which surrounds a circuit region on the semiconductor substrate, and a second groove, which surrounds the first groove, in the first insulating layer in a peripheral region surrounding the circuit region;
• burying a first pattern, which serves as a part of a first moisture-resistant ring, into the first groove and burying a second pattern, which serves as a part of a second moisture-resistant ring, into the second groove;
• forming a second insulating layer on the first insulating layer, the first pattern, and the second pattern;
• forming a third groove, which reaches the first pattern and which has a width smaller than that of the first pattern, and a fourth groove, which reaches the second pattern and which has a width smaller than that of the second pattern, in the second insulating layer;
• burying a third pattern, which serves as a part of the first moisture-resistant ring, into the second groove and burying a fourth pattern, which serves as a part of the second moisture-resistant ring, into the fourth groove;
• and
• forming a fifth pattern, which is connected to the third pattern, in which at least one of two side portions along the longitudinal direction do not overlap the first pattern two-dimensionally, and which serves as a part of the first moisture-resistant ring, and in addition, forming a sixth pattern, which is connected to the fourth pattern, in which at least one of two side portions along the longitudinal direction do not overlap the second pattern two-dimensionally, which serves as a part of the second moisture-resistant ring, and which is isolated from the fifth pattern, on the second insulating layer.