US 2014/0273444 A1 · MULTIPLE-PATTERNED SEMICONDUCTOR DEVICE CHANNELS

Abstract

A semiconductor device and method of manufacture are provided. The semiconductor device may include a multiple-patterned layer which may include multiple channels defined by multiple masks. A width of a first channel may be smaller than a width of a second channel. A conductor in the first channel may have a conductor width substantially equivalent to a conductor width of a conductor in the second channel. A spacer dielectric on a channel side may be included. The method of manufacture includes establishing a signal conductor layer including channels defined masks where a first channel may have a first width smaller than a second width of a second channel, introducing a spacer dielectric on a channel side, introducing a first conductor in the first channel having a first conductor width, and introducing a second conductor in the second channel having a second conductor width substantially equivalent to the first conductor width.

Claims13

Dependent claims

A method of manufacturing a semiconductor device, comprising:

establishing a signal conductor layer having a first channel defined by a first mask and a second channel defined by a second mask, the first channel having a first width and the second channel having a second width, the first width smaller than the second width;
introducing a spacer dielectric on a side of the second channel;
introducing a first conductor in the first channel having a first conductor width;
and
introducing a second conductor in the second channel having a second conductor width, the first conductor width substantially equivalent to the second conductor width.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/836,335Filed 15 Mar 2013

Priority

12 Mar 2013

Published

18 Sep 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10W 20/435
Characterised by their conductive parts: cross-sectional shapes or dispositions of interconnections
H10W 20/056
Of conductive parts of the interconnections: by filling conductive material into holes, grooves or trenches
H10W 20/076
Of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers: in via holes or…
H10W 20/089
By forming openings in the dielectric parts: using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Multiple-patterned semiconductor device channels

Life of this patent

Multiple-patterned semiconductor device channels

Life of this patent

Abstract

Claims13