Method for forming patterns of semiconductor device using sadp process

A method for forming patterns of a semiconductor device, comprising:

• forming a mask film on a substrate;
• forming a plurality of patterns on the mask film;
• forming a spacer film on the plurality of patterns, wherein the spacer film is conformally formed on the plurality of patterns and fills spaces between the plurality of patterns;
• removing a part of the spacer film, thereby forming a plurality of spacer film patterns on corresponding side walls of the plurality of patterns;
• removing the plurality of patterns;
• and
• etching the mask film using the plurality of spacer film patterns as a mask.

A method of forming metal patterns of a semiconductor device,

• forming a plurality of first patterns and a plurality of second patterns on a substrate, wherein the plurality of first patterns is spaced apart from each other at a first distance and the plurality of second patterns is spaced apart from each other at a second distance;
• forming a plurality of first spacer film patterns on both side walls of each of the plurality of first patterns to a first thickness;
• removing the plurality of first patterns, thereby forming a plurality of trenches exposing an upper surface of the substrate;
• forming a metal layer in the plurality of trenches;
• and
• forming a plurality of metal patterns by planarizing the metal layer until the plurality of metal patterns has a predetermined thickness, wherein the plurality of metal patterns are spaced apart from each other at a third distance.