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US 2014/0273436 A1Published application
Methods of forming barrier layers for conductive copper structures
AssigneeGlobalfoundries Inc.
InventorsBernd Hintze, Frank Koschinsky
Life of this patent
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Abstract
One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in at least the trench/via, after forming said barrier layer, performing at least one process operation to introduce manganese into the barrier layer and thereby define a manganese-containing barrier layer, forming a substantially pure copper-based seed layer above the manganese-containing barrier layer, depositing a bulk copper-based material above the copper-based seed layer so as to overfill the trench/via, and removing excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure.
Claims16
A method, comprising:
- forming a trench/via in a layer of insulating material;
- forming a barrier layer in at least said trench/via;
- after forming said barrier layer, performing at least one process operation to introduce manganese into said barrier layer and thereby define a manganese-containing barrier layer;
- forming a substantially pure copper-based seed layer above said manganese-containing barrier layer;
- depositing a bulk copper-based material above said substantially pure copper-based seed layer so as to overfill said trench/via;
- and
- removing excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure.
4 more elements
A method, comprising:
- forming a trench/via in a layer of insulating material;
- forming a barrier layer in at least said trench/via, said barrier layer being comprised of at least one of the following materials:
- tantalum (Ta), niobium (Nb), Tungsten (W), vanadium (V), hafnium (Hf), titanium (Ti) and zirconium (Zr);
- after forming said barrier layer, performing one of a plasma doping process operation or at least one ion implantation process to introduce manganese into said barrier layer and thereby define a manganese-containing barrier layer;
- forming a substantially pure copper-based seed layer above said manganese-containing barrier layer;
- depositing a bulk copper-based material above said substantially pure copper-based seed layer so as to overfill said trench/via;
- and
- removing excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure.
5 more elements
A method, comprising:
- forming a trench/via in a layer of insulating material;
- forming a barrier layer in at least said trench/via;
- after forming said barrier layer, performing a vertically oriented ion implantation process and a plurality of angled ion implantation processes to introduce manganese into said barrier layer and thereby define a manganese-containing barrier layer;
- forming a substantially pure copper-based seed layer on said manganese-containing barrier layer;
- depositing a bulk copper-based material above said substantially pure copper-based seed layer so as to overfill said trench/via;
- and
- removing excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure.
4 more elements
A method, comprising:
- forming a trench/via in a layer of insulating material;
- forming a first barrier layer in at least said trench/via, said first barrier layer being comprised of a first material combination that includes at least one of the following Group Y materials:
- tantalum (Ta), niobium (Nb), Tungsten (W), vanadium (V), hafnium (Hf), titanium (Ti) and zirconium (Zr), and at least one of the following Group X materials:
- titanium (Ti), cobalt (Co), ruthenium (Ru), manganese (Mn), aluminum (Al), nickel (Ni), chromium (Cr) and molybdenum (Mo);
- after forming said first barrier layer, forming a second barrier layer above said first barrier layer, said second barrier layer being comprised of a second material combination that includes at least one of the Group Y materials and at least one of the Group X materials, wherein said second material combination is different from that of said first material combination;
- forming a substantially pure copper-based seed layer above said second barrier layer;
- depositing a bulk copper-based material above said copper-based seed layer so as to overfill said trench/via;
- and
- removing excess materials positioned outside of said trench/via to thereby define a copper-based conductive structure.
6 more elements
Dependencies are inferred from the claim text.