Back-gated substrate and semiconductor device, and related method of fabrication

A method of forming a back-gate substrate structure, the method comprising:

• forming a doped region in a substrate, the doped region configured to communicatively connect to a field effect transistor (FET);
• forming a crystalline dielectric layer on the substrate and the doped region, the crystalline dielectric layer including an epitaxial oxide;
• forming a crystalline semiconductor layer on the crystalline dielectric layer;
• and
• forming a set of devices on the crystalline semiconductor layer above the doped region.

A method of forming a semiconductor device, the method comprising:

• forming a doped region in a substrate;
• forming a crystalline dielectric layer on the substrate and the doped region, the crystalline dielectric layer including an epitaxial oxide;
• forming a crystalline semiconductor layer on the crystalline dielectric layer;
• and
• forming a field effect transistor (FET) on the crystalline semiconductor layer above the doped region.