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AssigneeShin-Etsu Handotai Co., Ltd.
InventorsToru Ishizuka, Yuji Okubo, Takuya Sasaki, Akira Araki, Nobuhiko Noto
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The invention provides a reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-produce at the time of producing a bonded wafer is subjected to reclaiming polishing and is again available as a bond wafer or a base wafer, wherein, in the reclaiming polishing, the delaminate wafer is polished with use of a double-side polisher in a state that oxide film is not formed on a delaminated surface of the delaminated wafer and oxide film is formed on a back side which is the opposite side of the delaminated surface. As a result, the reclaiming processing method for a delaminated wafer, by which the delaminated wafer obtained as a by-product at the time of manufacturing a bonded wafer based on an ion implantation delamination method is subjected to the reclaiming polishing, which enables sufficiently improving quality.
A reclaiming processing method for a delaminated wafer, by which the delaminated wafer is subjected to reclaiming polishing and it is again available as a bond wafer or a base wafer, the delaminated wafer being obtained as a by-product at the time of producing a bonded wafer having a thin film on the base wafer by forming an ion implanted layer by ion-implanting at least one type of gas ions selected from hydrogen ions and rare gas ions into a surface of a bond wafer, bonding an ion implanted surface of the bond wafer to a surface of the base wafer directly or through an oxide film, then delaminating the bond wafer at the ion implanted layer,
Dependencies are inferred from the claim text.