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US 2014/0273399 A1Published application
Methods of fabricating silicon-on-insulator (soi) semiconductor devices using blanket fusion bonding
AssigneeKulite Semiconductor Products, Inc.
InventorsALEXANDER NED, SORIN STEFANESCU, JOE VANDEWEERT
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Abstract
A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication.
Claims20
A method for fabricating a silicon-on-insulator device, comprising:
- oxidizing a first surface of a first semiconductor wafer;
- doping the first semiconductor wafer through the oxidized first surface to produce a first doped layer, having a first doped side and a second doped side, and a semiconductor base layer;
- bonding the oxidized and first doped side of the first semiconductor wafer to an oxidized second semiconductor wafer;
- removing the semiconductor base layer to expose the second doped side of the first doped layer;
- and
- patterning the first doped layer.
3 more elements
A method for fabricating a silicon-on-insulator device, comprising:
- oxidizing a first surface of a first semiconductor wafer;
- doping the first semiconductor wafer through the oxidized first surface to produce an oxidized first doped layer, having a first doped side and a second doped side, and a semiconductor base layer;
- oxidizing a second surface of a second semiconductor wafer;
- bonding the oxidized and first doped side of the first semiconductor wafer to the oxidized second surface of the second semiconductor wafer;
- removing the semiconductor base layer to expose the second doped side of the first doped layer;
- and
- patterning the first doped layer.
4 more elements
A method for fabricating a silicon-on-insulator device, comprising:
- bonding a first semiconductor wafer, having a base layer, a first doped layer disposed on the base layer, and a first oxidized layer disposed on the first doped layer, to a second semiconductor wafer having a second oxidized layer disposed thereon, wherein the bond is between the first oxidized layer and the second oxidized layer;
- removing the base layer of the first semiconductor wafer to expose the first doped layer;
- and
- patterning the first doped layer.
1 more element
Dependencies are inferred from the claim text.