Methods of forming a thin layer and methods of manufacturing a phase change memory device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsDo-Hyung KIM, Eun-Tae KIM, Sung-Lae CHO
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Abstract
A method of forming a thin layer and a method of manufacturing a phase change memory device, the method of forming a thin layer including providing a first deposition source onto a substrate, the first deposition source not including tellurium; and providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by following the Formula 2: Te(CH(CH3)2)2 Formula 1 Ten(CH(CH3)2)2 Formula 2 wherein, in Formula 2, n is an integer greater than or equal to 2.
Claims20
A method of forming a thin layer, the method comprising:
- providing a first deposition source onto a substrate, the first deposition source not including tellurium;
- and
- providing a second deposition source onto the substrate, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by following the Formula 2:
- Te(CH(CH3)2)2 Formula 1
- Ten(CH(CH3)2)2 Formula 2
- wherein, in Formula 2, n is an integer greater than or equal to 2.
A method of manufacturing a phase change memory device, the method comprising:
- forming a lower electrode on a substrate;
- forming a phase change material layer pattern on the lower electrode, wherein forming the phase change material layer pattern includes:
- providing a first deposition source onto the lower electrode, the first deposition source not including tellurium;
- and
- providing a second deposition source onto the lower electrode, the second deposition source including a first tellurium precursor represented by the following Formula 1 and a second tellurium precursor represented by the following Formula 2;
- and
- forming an upper electrode on the phase change material layer pattern:
- Te(CH(CH3)2)2 Formula 1
- Ten(CH(CH3)2)2 Formula 2
- wherein, in Formula 2, n is an integer greater than or equal to 2.
A method of forming a thin layer, the method comprising:
- providing a substrate;
- providing a first deposition source onto the substrate, the first deposition source being free of tellurium;
- and
- providing a second deposition source onto the substrate, the second deposition source including:
- a first tellurium precursor represented by the following Formula 1:
- Te(CH(CH3)2)2, and Formula 1
- a second tellurium precursor represented by the following Formula 2:
- Ten(CH(CH3)2)2, Formula 2
- wherein, in Formula 2, n is an integer greater than or equal to 2.
Dependencies are inferred from the claim text.