US 2014/0273389 A1 · SEMICONDUCTOR DEVICE HAVING CONTROLLED FINAL METAL CRITICAL DIMENSION

Abstract

An approach for controlling a critical dimension (CD) of a RMG of a semiconductor device is provided. Specifically, embodiments of the present invention allow for CD consistency between a dummy gate and a subsequent RMG. In a typical embodiment, a dummy gate having a cap layer is formed over a substrate. A re-oxide layer is then formed over the substrate and around the dummy gate. A set of doping implants will then be implanted in the substrate, and the re-oxide layer will subsequently be removed (after the set of doping implants have been implanted). A set of spacers will then be formed along a set of side walls of the dummy gate and an epitaxial layer will be formed around the set of side walls. Thereafter, the dummy gate will be replaced with a metal gate (e.g., an aluminum or tungsten body having a high-k metal liner there-around).

Claims20

Dependent claims

A method for controlling a critical dimension (CD) of a gate of a semiconductor device, comprising:

forming a dummy gate over a substrate;
forming a re-oxide layer over the substrate and around the dummy gate;
implanting a set of doping implants in the substrate;
and
removing the re-oxide layer after the set of doping implants have been implanted.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor device having controlled final metal critical dimension

Life of this patent

Semiconductor device having controlled final metal critical dimension

Life of this patent

Abstract

Claims20