Method of forming metal silicide layer
AssigneeUnited Microelectronics Corp.
InventorsPo-Chao Tsao, Chien-Ting Lin
Life of this patent
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Abstract
A method of forming a metal silicide layer includes the following steps. At first, at least a gate structure, at least a source/drain region and a first dielectric layer are formed on a substrate, and the gate structure is aligned with the first dielectric layer. Subsequently, a cap layer covering the gate structure is formed, and the cap layer does not overlap the first dielectric layer and the source/drain region. Afterwards, the first dielectric layer is removed to expose the source/drain region, and a metal silicide layer totally covering the source/drain region is formed.
Claims20
A method of forming a metal silicide layer, comprising:
- forming at least a gate structure, at least a source/drain region and a first dielectric layer on a substrate, wherein the gate structure is aligned with the first dielectric layer;
- forming a cap layer covering the gate structure, wherein the cap layer does not overlap the first dielectric layer and the source/drain region;
- removing the first dielectric layer to expose the source/drain region;
- and
- forming a metal silicide layer totally covering the source/drain region.
Dependencies are inferred from the claim text.